Set remaining values for passives

main
Nathan L. Conrad 5 years ago
parent 40ac23917a
commit 9bad665a7b

@ -2530,7 +2530,7 @@
(fp_text reference C2 (at 0 -1.43) (layer F.SilkS) hide
(effects (font (size 0.9144 1.016) (thickness 0.127)))
)
(fp_text value TBD (at 0 1.43) (layer F.Fab) hide
(fp_text value 1u (at 0 1.43) (layer F.Fab) hide
(effects (font (size 1 1) (thickness 0.15)))
)
(fp_line (start 1.48 0.73) (end -1.48 0.73) (layer F.CrtYd) (width 0.05))
@ -2951,7 +2951,7 @@
(fp_text reference R10 (at 0 -1.43 90) (layer F.SilkS) hide
(effects (font (size 0.9144 1.016) (thickness 0.127)))
)
(fp_text value TBD (at 0 1.43 90) (layer F.Fab) hide
(fp_text value 0 (at 0 1.43 90) (layer F.Fab) hide
(effects (font (size 1 1) (thickness 0.15)))
)
(fp_line (start -0.8 0.4) (end -0.8 -0.4) (layer F.Fab) (width 0.1))
@ -2987,7 +2987,7 @@
(fp_text reference R9 (at 0 -1.43) (layer F.SilkS) hide
(effects (font (size 0.9144 1.016) (thickness 0.127)))
)
(fp_text value TBD (at 0 1.43) (layer F.Fab) hide
(fp_text value 150k (at 0 1.43) (layer F.Fab) hide
(effects (font (size 1 1) (thickness 0.15)))
)
(fp_line (start 1.48 0.73) (end -1.48 0.73) (layer F.CrtYd) (width 0.05))
@ -3023,7 +3023,7 @@
(fp_text reference R8 (at 0 -1.43) (layer F.SilkS) hide
(effects (font (size 0.9144 1.016) (thickness 0.127)))
)
(fp_text value TBD (at 0 1.43) (layer F.Fab) hide
(fp_text value 2M (at 0 1.43) (layer F.Fab) hide
(effects (font (size 1 1) (thickness 0.15)))
)
(fp_line (start -0.8 0.4) (end -0.8 -0.4) (layer F.Fab) (width 0.1))
@ -3059,7 +3059,7 @@
(fp_text reference R7 (at 0 -1.43) (layer F.SilkS) hide
(effects (font (size 0.9144 1.016) (thickness 0.127)))
)
(fp_text value TBD (at 0 1.43) (layer F.Fab) hide
(fp_text value 33k (at 0 1.43) (layer F.Fab) hide
(effects (font (size 1 1) (thickness 0.15)))
)
(fp_line (start -0.8 0.4) (end -0.8 -0.4) (layer F.Fab) (width 0.1))
@ -3095,7 +3095,7 @@
(fp_text reference R6 (at 0 -1.43 90) (layer F.SilkS) hide
(effects (font (size 0.9144 1.016) (thickness 0.127)))
)
(fp_text value TBD (at 0 1.43 90) (layer F.Fab) hide
(fp_text value 33k (at 0 1.43 90) (layer F.Fab) hide
(effects (font (size 1 1) (thickness 0.15)))
)
(fp_line (start -0.8 0.4) (end -0.8 -0.4) (layer F.Fab) (width 0.1))
@ -3131,7 +3131,7 @@
(fp_text reference R5 (at 0 -1.43 90) (layer F.SilkS) hide
(effects (font (size 0.9144 1.016) (thickness 0.127)))
)
(fp_text value TBD (at 0 1.43 90) (layer F.Fab) hide
(fp_text value 220k (at 0 1.43 90) (layer F.Fab) hide
(effects (font (size 1 1) (thickness 0.15)))
)
(fp_line (start 1.48 0.73) (end -1.48 0.73) (layer F.CrtYd) (width 0.05))
@ -3275,7 +3275,7 @@
(fp_text reference C5 (at 0 -1.43 90) (layer F.SilkS) hide
(effects (font (size 0.9144 1.016) (thickness 0.127)))
)
(fp_text value TBD (at 0 1.43 90) (layer F.Fab) hide
(fp_text value 100n (at 0 1.43 90) (layer F.Fab) hide
(effects (font (size 1 1) (thickness 0.15)))
)
(fp_line (start -0.8 0.4) (end -0.8 -0.4) (layer F.Fab) (width 0.1))
@ -3311,7 +3311,7 @@
(fp_text reference C4 (at 0 -1.43) (layer F.SilkS) hide
(effects (font (size 0.9144 1.016) (thickness 0.127)))
)
(fp_text value TBD (at 0 1.43) (layer F.Fab) hide
(fp_text value 1n (at 0 1.43) (layer F.Fab) hide
(effects (font (size 1 1) (thickness 0.15)))
)
(fp_line (start -0.8 0.4) (end -0.8 -0.4) (layer F.Fab) (width 0.1))
@ -3347,7 +3347,7 @@
(fp_text reference C3 (at 0 -1.43 90) (layer F.SilkS) hide
(effects (font (size 0.9144 1.016) (thickness 0.127)))
)
(fp_text value TBD (at 0 1.43 90) (layer F.Fab) hide
(fp_text value 1u (at 0 1.43 90) (layer F.Fab) hide
(effects (font (size 1 1) (thickness 0.15)))
)
(fp_line (start -0.8 0.4) (end -0.8 -0.4) (layer F.Fab) (width 0.1))
@ -3383,7 +3383,7 @@
(fp_text reference C1 (at 0 -1.43 90) (layer F.SilkS) hide
(effects (font (size 0.9144 1.016) (thickness 0.127)))
)
(fp_text value TBD (at 0 1.43 90) (layer F.Fab) hide
(fp_text value 1u (at 0 1.43 90) (layer F.Fab) hide
(effects (font (size 1 1) (thickness 0.15)))
)
(fp_line (start -0.8 0.4) (end -0.8 -0.4) (layer F.Fab) (width 0.1))
@ -3962,7 +3962,7 @@
)
)
)
(zone (net 1) (net_name GND) (layer F.Cu) (tstamp 5F1CDE67) (hatch edge 0.508)
(zone (net 1) (net_name GND) (layer F.Cu) (tstamp 5F23877A) (hatch edge 0.508)
(connect_pads (clearance 0.254))
(min_thickness 0.1524)
(fill yes (arc_segments 32) (thermal_gap 0.1524) (thermal_bridge_width 0.3048))
@ -4582,7 +4582,7 @@
)
)
)
(zone (net 1) (net_name GND) (layer F.Cu) (tstamp 5F1CDE64) (hatch edge 0.508)
(zone (net 1) (net_name GND) (layer F.Cu) (tstamp 5F238777) (hatch edge 0.508)
(connect_pads no (clearance 0.3556))
(min_thickness 0.1524)
(fill yes (arc_segments 32) (thermal_gap 0.254) (thermal_bridge_width 0.3048))
@ -4599,7 +4599,7 @@
)
)
)
(zone (net 1) (net_name GND) (layer F.Cu) (tstamp 5F1CDE61) (hatch edge 0.508)
(zone (net 1) (net_name GND) (layer F.Cu) (tstamp 5F238774) (hatch edge 0.508)
(connect_pads no (clearance 0.3556))
(min_thickness 0.1524)
(fill yes (arc_segments 32) (thermal_gap 0.254) (thermal_bridge_width 0.3048))
@ -4616,7 +4616,7 @@
)
)
)
(zone (net 1) (net_name GND) (layer F.Cu) (tstamp 5F1CDE5E) (hatch edge 0.508)
(zone (net 1) (net_name GND) (layer F.Cu) (tstamp 5F238771) (hatch edge 0.508)
(connect_pads no (clearance 0.3556))
(min_thickness 0.1524)
(fill yes (arc_segments 32) (thermal_gap 0.254) (thermal_bridge_width 0.3048))
@ -4633,7 +4633,7 @@
)
)
)
(zone (net 1) (net_name GND) (layer F.Cu) (tstamp 5F1CDE5B) (hatch edge 0.508)
(zone (net 1) (net_name GND) (layer F.Cu) (tstamp 5F23876E) (hatch edge 0.508)
(connect_pads no (clearance 0.3556))
(min_thickness 0.1524)
(fill yes (arc_segments 32) (thermal_gap 0.254) (thermal_bridge_width 0.3048))
@ -4650,7 +4650,7 @@
)
)
)
(zone (net 1) (net_name GND) (layer B.Cu) (tstamp 5F1CDE58) (hatch edge 0.508)
(zone (net 1) (net_name GND) (layer B.Cu) (tstamp 5F23876B) (hatch edge 0.508)
(connect_pads no (clearance 0.3556))
(min_thickness 0.1524)
(fill yes (arc_segments 32) (thermal_gap 0.254) (thermal_bridge_width 0.3048))
@ -4667,7 +4667,7 @@
)
)
)
(zone (net 1) (net_name GND) (layer B.Cu) (tstamp 5F1CDE55) (hatch edge 0.508)
(zone (net 1) (net_name GND) (layer B.Cu) (tstamp 5F238768) (hatch edge 0.508)
(connect_pads no (clearance 0.3556))
(min_thickness 0.1524)
(fill yes (arc_segments 32) (thermal_gap 0.254) (thermal_bridge_width 0.3048))
@ -4684,7 +4684,7 @@
)
)
)
(zone (net 1) (net_name GND) (layer B.Cu) (tstamp 5F1CDE52) (hatch edge 0.508)
(zone (net 1) (net_name GND) (layer B.Cu) (tstamp 5F238765) (hatch edge 0.508)
(connect_pads (clearance 0.3556))
(min_thickness 0.1524)
(fill yes (arc_segments 32) (thermal_gap 0.254) (thermal_bridge_width 0.3048))
@ -4701,7 +4701,7 @@
)
)
)
(zone (net 1) (net_name GND) (layer B.Cu) (tstamp 5F1CDE4F) (hatch edge 0.508)
(zone (net 1) (net_name GND) (layer B.Cu) (tstamp 5F238762) (hatch edge 0.508)
(connect_pads no (clearance 0.3556))
(min_thickness 0.1524)
(fill yes (arc_segments 32) (thermal_gap 0.254) (thermal_bridge_width 0.3048))
@ -4718,7 +4718,7 @@
)
)
)
(zone (net 1) (net_name GND) (layer B.Cu) (tstamp 5F1CDE4C) (hatch edge 0.508)
(zone (net 1) (net_name GND) (layer B.Cu) (tstamp 5F23875F) (hatch edge 0.508)
(connect_pads thru_hole_only (clearance 0.254))
(min_thickness 0.1524)
(fill yes (arc_segments 32) (thermal_gap 0.254) (thermal_bridge_width 0.508))
@ -5047,7 +5047,7 @@
)
)
)
(zone (net 2) (net_name VDD) (layer B.Cu) (tstamp 5F1CDE49) (hatch edge 0.508)
(zone (net 2) (net_name VDD) (layer B.Cu) (tstamp 5F23875C) (hatch edge 0.508)
(priority 1)
(connect_pads no (clearance 0.254))
(min_thickness 0.1524)
@ -5079,7 +5079,7 @@
)
)
)
(zone (net 2) (net_name VDD) (layer F.Cu) (tstamp 5F1CDE46) (hatch edge 0.508)
(zone (net 2) (net_name VDD) (layer F.Cu) (tstamp 5F238759) (hatch edge 0.508)
(priority 1)
(connect_pads thru_hole_only (clearance 0.254))
(min_thickness 0.1524)
@ -5144,7 +5144,7 @@
)
)
)
(zone (net 25) (net_name SWCLK) (layer F.Cu) (tstamp 5F1CDE43) (hatch edge 0.508)
(zone (net 25) (net_name SWCLK) (layer F.Cu) (tstamp 5F238756) (hatch edge 0.508)
(priority 1)
(connect_pads no (clearance 0.254))
(min_thickness 0.1524)

@ -93,7 +93,7 @@ L Device:R R5
U 1 1 5EEBD3A8
P 6400 4150
F 0 "R5" H 6470 4196 50 0000 L CNN
F 1 "TBD" H 6470 4105 50 0000 L CNN
F 1 "220k" H 6470 4105 50 0000 L CNN
F 2 "Resistor_SMD:R_0603_1608Metric" V 6330 4150 50 0001 C CNN
F 3 "~" H 6400 4150 50 0001 C CNN
1 6400 4150
@ -340,7 +340,7 @@ L Device:C C5
U 1 1 5EED00A7
P 9200 3900
F 0 "C5" H 9315 3946 50 0000 L CNN
F 1 "TBD" H 9315 3855 50 0000 L CNN
F 1 "100n" H 9315 3855 50 0000 L CNN
F 2 "Capacitor_SMD:C_0603_1608Metric" H 9238 3750 50 0001 C CNN
F 3 "~" H 9200 3900 50 0001 C CNN
1 9200 3900
@ -364,7 +364,7 @@ L Device:R R9
U 1 1 5EEF0941
P 8100 3900
F 0 "R9" H 8170 3946 50 0000 L CNN
F 1 "TBD" H 8170 3855 50 0000 L CNN
F 1 "150k" H 8170 3855 50 0000 L CNN
F 2 "Resistor_SMD:R_0603_1608Metric" V 8030 3900 50 0001 C CNN
F 3 "~" H 8100 3900 50 0001 C CNN
1 8100 3900
@ -375,7 +375,7 @@ L Device:R R7
U 1 1 5EF02303
P 7650 3900
F 0 "R7" H 7720 3946 50 0000 L CNN
F 1 "TBD" H 7720 3855 50 0000 L CNN
F 1 "33k" H 7720 3855 50 0000 L CNN
F 2 "Resistor_SMD:R_0603_1608Metric" V 7580 3900 50 0001 C CNN
F 3 "~" H 7650 3900 50 0001 C CNN
1 7650 3900
@ -386,7 +386,7 @@ L Device:R R6
U 1 1 5EF063F0
P 7500 4150
F 0 "R6" H 7430 4196 50 0000 R CNN
F 1 "TBD" H 7430 4105 50 0000 R CNN
F 1 "33k" H 7430 4105 50 0000 R CNN
F 2 "Resistor_SMD:R_0603_1608Metric" V 7430 4150 50 0001 C CNN
F 3 "~" H 7500 4150 50 0001 C CNN
1 7500 4150
@ -439,7 +439,7 @@ L Device:C C1
U 1 1 5F2C6082
P 1750 1350
F 0 "C1" V 1498 1350 50 0000 C CNN
F 1 "TBD" V 1589 1350 50 0000 C CNN
F 1 "1u" V 1589 1350 50 0000 C CNN
F 2 "Capacitor_SMD:C_0603_1608Metric" H 1788 1200 50 0001 C CNN
F 3 "~" H 1750 1350 50 0001 C CNN
1 1750 1350
@ -454,7 +454,7 @@ L Device:C C2
U 1 1 5F2F3655
P 5600 3250
F 0 "C2" V 5348 3250 50 0000 C CNN
F 1 "TBD" V 5439 3250 50 0000 C CNN
F 1 "1u" V 5439 3250 50 0000 C CNN
F 2 "Capacitor_SMD:C_0603_1608Metric" H 5638 3100 50 0001 C CNN
F 3 "~" H 5600 3250 50 0001 C CNN
1 5600 3250
@ -668,7 +668,7 @@ L Device:C C4
U 1 1 5F196354
P 7900 1700
F 0 "C4" H 7785 1746 50 0000 R CNN
F 1 "TBD" H 7785 1655 50 0000 R CNN
F 1 "1n" H 7785 1655 50 0000 R CNN
F 2 "Capacitor_SMD:C_0603_1608Metric" H 7938 1550 50 0001 C CNN
F 3 "~" H 7900 1700 50 0001 C CNN
1 7900 1700
@ -679,7 +679,7 @@ L Device:C C3
U 1 1 5F1951E0
P 7500 1950
F 0 "C3" H 7385 1996 50 0000 R CNN
F 1 "TBD" H 7385 1905 50 0000 R CNN
F 1 "1u" H 7385 1905 50 0000 R CNN
F 2 "Capacitor_SMD:C_0603_1608Metric" H 7538 1800 50 0001 C CNN
F 3 "~" H 7500 1950 50 0001 C CNN
1 7500 1950
@ -690,7 +690,7 @@ L Device:R R8
U 1 1 5F193EB8
P 8050 2200
F 0 "R8" H 7981 2246 50 0000 R CNN
F 1 "TBD" H 7981 2155 50 0000 R CNN
F 1 "2M" H 7981 2155 50 0000 R CNN
F 2 "Resistor_SMD:R_0603_1608Metric" V 7980 2200 50 0001 C CNN
F 3 "~" H 8050 2200 50 0001 C CNN
1 8050 2200
@ -701,7 +701,7 @@ L Device:R R10
U 1 1 5F192DE5
P 9100 1900
F 0 "R10" V 9215 1900 50 0000 C CNN
F 1 "TBD" V 9306 1900 50 0000 C CNN
F 1 "0" V 9306 1900 50 0000 C CNN
F 2 "Resistor_SMD:R_0603_1608Metric" V 9030 1900 50 0001 C CNN
F 3 "~" H 9100 1900 50 0001 C CNN
1 9100 1900

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